to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation (http://www.renesas.com) send any inquiries to http://www.renesas.com/inquiry.
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without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. re nesas electronics shall not be in any way liable for any damages or losses incurred by you or third partie s arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intende d where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electr onics data sheets or data books, etc. ?standard?: computers; office equipmen t; communications e quipment; test and measurement equipment; audio and visual equipment; home electronic a ppliances; machine tools; personal electronic equipmen t; and industrial robots. ?high quality?: transportation equi pment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specif ically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support device s or systems), surgical im plantations, or healthcare intervention (e.g. excision, etc.), and any other applicati ons or purposes that pose a di rect threat to human life. 8. you should use the renesas electronics pr oducts described in this document within the range specified by renesas electronics , especially with respect to the maximum ra ting, operating supply voltage range, movement power volta ge range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its produc ts, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate a nd malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physic al injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safe ty design for hardware and software in cluding but not limited to redundancy, fire control and malfunction prevention, appropri ate treatment for aging degradation or an y other appropriate measures. because the evaluation of microcomputer software alone is very difficult , please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesa s electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regul ate the inclusion or use of c ontrolled substances, including wi thout limitation, the eu rohs directive. renesas electronics assumes no liability for damage s or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in w hole or in part, without prio r written consent of renes as electronics. 12. please contact a renesa s electronics sales office if you have any questi ons regarding the informat ion contained in this document or renesas electroni cs products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sk3813 switching n-channel power mos fet data sheet document no. d16739ej3v0ds00 (3rd edition) date published august 2006 ns cp(k) printed in japan 2004 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. description the 2sk3813 is n-channel mos field effect transistor designed for high current switching applications. features ? super low on-state resistance r ds(on)1 = 5.3 m max. (v gs = 10 v, i d = 30 a) r ds(on)2 = 7.1 m max. (v gs = 4.5 v, i d = 30 a) ? low c iss : c iss = 5500 pf typ. absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 40 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) i d(dc) 60 a drain current (pulse) note1 i d(pulse) 240 a total power dissipation (t c = 25c) p t1 84 w total power dissipation (t a = 25c) p t2 1.0 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c single avalanche energy note2 e as 137 mj repetitive avalanche current note3 i ar 37 a repetitive avalanche energy note3 e ar 137 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25c, v dd = 20 v, r g = 25 , v gs = 20 0 v, l = 100 h 3. t ch(peak) 150c, r g = 25 ordering information part number package 2sk3813 to-251 (mp-3) 2sk3813-z to-252 (mp-3z) (to-251) (to-252)
data sheet d16739ej3v0ds 2 2sk3813 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 10 p a gate leakage current i gss v gs = r 20 v, v ds = 0 v r 100 na gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.0 2.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 30 a 21 42 s drain to source on-state resistance note r ds(on)1 v gs = 10 v, i d = 30 a 4.2 5.3 m : r ds(on)2 v gs = 4.5 v, i d = 30 a 5.3 7.1 m : input capacitance c iss v ds = 10 v 5500 pf output capacitance c oss v gs = 0 v 740 pf reverse transfer capacitance c rss f = 1 mhz 490 pf turn-on delay time t d(on) v dd = 20 v, i d = 30 a 25 ns rise time t r v gs = 10 v 8.5 ns turn-off delay time t d(off) r g = 0 : 81 ns fall time t f 10 ns total gate charge q g v dd = 32 v 96 nc gate to source charge q gs v gs = 10 v 18 nc gate to drain charge q gd i d = 60 a 23.5 nc body diode forward voltage note v f(s-d) i f = 60 a, v gs = 0 v 0.94 1.5 v reverse recovery time t rr i f = 60 a, v gs = 0 v 35 ns reverse recovery charge q rr di/dt = 100 a/ p s 31 nc note pulsed test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d16739ej3v0ds 3 2sk3813 typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - q c p t - total power dissipation - w 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t c - case temperature - q c forward bias safe operating area i d - drain current - a 1 10 100 1000 0.1 1 10 100 i d(pulse) = 240 a r ds(on) limited (at v gs = 10 v) power dissipation limited i d(dc) = 60 a 10 ms 1 ms 100 p s t c = 25c single pulse v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - q c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 125c/w r th(ch-c) = 1.49c/w single pulse pw - pulse width - s 100 p 1 m 10 m 100 m 1 10 100 1000
data sheet d16739ej3v0ds 4 2sk3813 drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 50 100 150 200 250 300 012345 v gs = 10 v pulsed 4.5 v v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 1000 012345 v ds = 10 v pulsed t ch = 55c 25c 75c 125c 150c v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v 0 0.5 1 1.5 2 2.5 3 3.5 4 -75 -25 25 75 125 175 v ds = 10 v i d = 1 ma t ch - channel temperature - q c | y fs | - forward transfer admittance - s 0.1 1 10 100 0.1 1 10 100 v ds = 10 v pulsed t ch = 55c 25c 75c 125c 150c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m : 0 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 10 v pulsed v gs = 4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m : 0 2 4 6 8 10 0 5 10 15 20 i d = 30 a pulsed v gs - gate to source voltage - v
data sheet d16739ej3v0ds 5 2sk3813 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m : 0 1 2 3 4 5 6 7 8 9 10 -75 -25 25 75 125 175 i d = 30 a pulsed 10 v v gs = 4.5 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 100000 0.01 0.1 1 10 100 c iss c oss c rss v gs = 0 v f = 1 mhz v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 100 t r t d(of f ) t d(on) t f v dd = 20 v v gs = 10 v r g = 0 : i d - drain current - a v ds - drain to source voltage - v 0 5 10 15 20 25 30 35 0 20406080100 0 2 4 6 8 10 12 14 v ds v dd = 32 v 20 v 8 v i d = 60 a v gs q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. diode forward current i f - diode forward current - a 0.01 0.1 1 10 100 1000 00.511.5 v gs = 10 v 0 v pulsed v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 1000 0.1 1 10 100 di/dt = 100 a/ p s v gs = 0 v i f - diode forward current - a
data sheet d16739ej3v0ds 6 2sk3813 single avalanche current vs. inductive load single avalanche energy derating factor i as - single avalanche current - a 1 10 100 i as = 37 a e as = 137 mj v dd = 20 v r g = 25 : v gs = 20 o 0 v starting t ch = 25c l - inductive load - h energy derating factor - % 0 20 40 60 80 100 25 50 75 100 125 150 v dd = 20 v r g = 25 : v gs = 20 o 0 v i as d 37 a starting t ch - starting channel temperature - c 1 p 10 p 100 p 1 m 10 m
data sheet d16739ej3v0ds 7 2sk3813 package drawings (unit: mm) 1) to-251 (mp-3) 2) to-252 (mp-3z) 1. gate 2. drain 3. source 4. fin (drain) 2 13 6.5 0.2 5.0 0.2 4 1.5 ? 0.1 +0.2 5.5 0.2 7.0 min. 13.7 min. 2.3 2.3 0.75 0.5 0.1 2.3 0.2 1.6 0.2 1.1 0.2 0.5 ? 0.1 +0.2 0.5 ? 0.1 +0.2 123 4 6.5 0.2 4.4 0.2 5.0 0.2 0.5 0.1 0.5 0.1 5.6 0.3 9.5 0.5 2.5 0.5 1.0 0.5 1.5 ? 0.1 +0.2 2.3 0.2 0.5 0.1 note note 0.4 min. 0.5 typ. 0.15 0.15 2.3 0.3 2.3 0.3 5.5 0.2 1. gate 2. drain 3. source 4. fin (drain) note the depth of notch at the top of the fin is from 0 to 0.2 mm. equivalent circuit source bod y diod e g ate drain remark strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
2sk3813 the information in this document is current as of august, 2006. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific":
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